Epitaxial growth of celestite on barite (001) face at a molecular scale
نویسندگان
چکیده
منابع مشابه
Epitaxial growth of Cu on Cu„001...: Experiments and simulations
A quantitative comparison between experimental and Monte Carlo simulation results for the epitaxial growth of Cu/Cu~001! in the submonolayer regime is presented. The simulations take into account a complete set of hopping processes whose activation energies are derived from semiempirical calculations using the embedded-atom method. The island separation is measured as a function of the incoming...
متن کاملEpitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon
Silicon crystallizes in the diamond-cubic phase and shows only a weak emission at 1.1 eV. Diamond-hexagonal silicon however has an indirect bandgap at 1.5 eV and has therefore potential for application in opto-electronic devices. Here we discuss a method based on advanced silicon device processing to form diamond-hexagonal silicon nano-ribbons. With an appropriate temperature anneal applied to ...
متن کاملEpitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect morphology
We describe the evolution of microstructure during ultrahigh vacuum ion beam sputter deposition of Cu (00 1) at room temperature on hydrogen-terminated Si (00 1) . In situ reflection high energy electron diffraction indicates growth of an epitaxial Cu (001) film on Si (001) with the intensity of the Bragg rods sharpening during 5-20 nm of Cu film growth. Post-growth x-ray diffraction indicates ...
متن کاملShape transitions of epitaxial islands during strained layer growth: anatase TiO2(001) on SrTiO3(001).
Extended annealing in UHV causes the surface region of SrTiO3(001) to become enriched with TiO2, resulting in the formation of epitaxial islands of anatase TiO2(001). The islands are studied using UHV scanning electron microscopy (SEM), which reveals the changes in morphology during growth induced by misfit strain. Starting from a square island, two types of shape transition are observed. In th...
متن کاملGrowth and physical properties of epitaxial metastable cubic TaN„001..
We report the growth of epitaxial metastable B1 NaCl structure TaN~001! layers. The films were grown on MgO~001! at 600 °C by ultrahigh vacuum reactive magnetron sputter deposition in mixed Ar/N2 discharges maintained at 20 mTorr ~2.67 Pa!. X-ray diffraction and transmission electron microscopy results establish the epitaxial relationship as cube-on-cube, (001)TaNi(001)MgO with @100#TaNi@100#Mg...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Surface Science
سال: 2005
ISSN: 0039-6028
DOI: 10.1016/j.susc.2005.02.051